STPSC806：600 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Particularly suitable in PFC boost diode function
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC806G-TR | 1.661 | 100 | D2PAK | Tape And Reel | 175 | NEC | EAR99 | CHINA |
| STPSC806D | 1.601 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
