STS26N3LLH6：N-channel 30 V, 0.0038 Ohm, 26 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- RDS(on)
* Qg
industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
Product Specifications
Application Notes
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STS26N3LLH6 | SO-8 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
