TIP147:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Monolithic Darlington configuration
  • Integrated antiparallel collector-emitter diode
Product Specifications
DescriptionVersionSize
DS0857: Complementary power Darlington transistors8.1135 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
TIP147TO-247Tube0.696500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
TIP147TO-247IndustrialEcopack2md_lw-wspc-to-wspc-247_tslw-wspc-2f66b32_sdm_signed.pdf
md_lw-wspc-to-wspc-247_tslw-wspc-2f66b32_sdm.xml
Complementary power Darlington transistors TIP147
md_lw-wspc-to-wspc-247_tslw-wspc-2f66b32_sdm_signed.pdf TIP147
md_lw-wspc-to-wspc-247_tslw-wspc-2f66b32_sdm.xml TIP147