2SK1119 Power MOSFET (N-ch 700V《VDSS) _ BDTIC a Leading Distributor in China

Toshiba Package Name	TO-220AB
Pins	3

Characteristics	Symbol	Rating	Unit
Drain current	I_D	4	A
Power Dissipation	P_D	100	W
Drain-Source voltage	V_DSS	1000	V
Drain-Source voltage	V_DSS	1000	V

Characteristics	Symbol	Condition	Value	Unit
Total gate charge (Typ.)	Q_g	-	60	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	3.8	Ω

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