DataSheetFeaturePolarity | N-ch |
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Generation | L²-π-MOSⅤ |
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RoHS Compatible Product(s) (#) | Available |
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Assembly bases | Japan |
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Package InformationPackage Image | |
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Toshiba Package Name | TO-3P(L) |
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Pins | 3 |
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Mounting | Through Hole |
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| Absolute Maximum RatingsCharacteristics | Symbol | Rating | Unit |
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Drain current | ID | 60 | A | Power Dissipation | PD | 150 | W | Drain-Source voltage | VDSS | 60 | V | Drain-Source voltage | VDSS | 60 | V |
Electrical CharacteristicsCharacteristics | Symbol | Condition | Value | Unit |
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Total gate charge (Typ.) | Qg | - | 170 | nC | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 0.015 | Ω | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 0.011 | Ω |
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