2SK2606 Power MOSFET (N-ch 700V《VDSS) _ BDTIC a Leading Distributor in China

Toshiba Package Name	TO-3P(N)IS
Pins	3

Characteristics	Symbol	Rating	Unit
Drain current	I_D	8	A
Power Dissipation	P_D	85	W
Drain-Source voltage	V_DSS	800	V
Drain-Source voltage	V_DSS	800	V

Characteristics	Symbol	Condition	Value	Unit
Total gate charge (Typ.)	Q_g	-	68	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	1.2	Ω

Application Note	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
Application Note	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
Application Note	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
Application Note	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
Application Note	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)