DataSheetFeaturePolarity | N-ch |
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Generation | π-MOSⅢ |
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RoHS Compatible Product(s) (#) | Available |
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Assembly bases | Japan |
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Package InformationPackage Image | |
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Toshiba Package Name | TO-3P(N) |
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JEITA | SC-65 |
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Pins | 3 |
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Mounting | Through Hole |
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| Absolute Maximum RatingsCharacteristics | Symbol | Rating | Unit |
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Drain current | ID | 10 | A | Power Dissipation | PD | 150 | W | Drain-Source voltage | VDSS | 900 | V | Drain-Source voltage | VDSS | 900 | V |
Electrical CharacteristicsCharacteristics | Symbol | Condition | Value | Unit |
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Input capacitance (Typ.) | Ciss | - | 2150 | pF | Total gate charge (Typ.) | Qg | - | 70 | nC | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1.25 | Ω |
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