2SK3756 Radio-frequency power MOSFET

DataSheet
Feature
Application ScopeFRS/GMRS(470MHz)
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-Mini
JEITASC-62
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID1A
Power DissipationPD3W
Drain-Source voltageVDSS7V
Drain-Source voltageVDSS7V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Output Power (Min)POUTPIN=0.1W
Tc=25degC
VDD=4.5V
f=470MHz		1.25W
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
2SK3756(TE12L,F)Japan1000yes
Documents
S-parameterS-parameter[Sep,2003] NEW(txt: 99KB)
Reliability InformationReliability Data[Apr,2016](PDF: 158KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
TA79L09F
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