MT4S102T Radio-frequency SiGe Heterojunction Bipolar Transistor _ BDTIC a Leading Distributor in China

MT4S102T Radio-frequency SiGe Heterojunction Bipolar Transistor

DataSheet

Download Japanese version(PDF:205KB)
Download English version(PDF:129KB)

Feature

Application Scope	VHF/UHF band low noise amplifier
Polarity	NPN
RoHS Compatible Product(s) (#)	Available
Assembly bases	Japan

Package Information

Package Image
Toshiba Package Name	TESQ
Pins	4
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector Current	I_C	0.02	A
Collector power dissipation	P_C	60	mW
Junction temperature	T_j	150	degC
Collector-emitter voltage	V_CEO	3	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Transition frequency (Typ.)	f_T	-	25	GHz

Documents

Catalog	Radio-Frequency Semiconductors[Feb,2015]	(PDF: 1320KB)
Catalog	Radio-Frequency Semiconductors Diodes[Sep,2006]	(PDF: 2219KB)
Catalog	Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006]	(PDF: 2873KB)
Catalog	High-Frequency Semiconductors Power Devices[Mar,2004]	(PDF: 2496KB)

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