RFM12U7X Radio-frequency power MOSFET

DataSheet
Feature
Application ScopeUHF/VHF band professional radio (520MHz)
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-X
Pins4
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID4A
Power DissipationPD20W
Drain-Source voltageVDSS20V
Drain-Source voltageVDSS20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Output Power (Min)POUTPIN=1W
Tc=25degC
VDD=7.2V
f=520MHz
11.5W
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
RFM12U7X(TE12L,Q)Japan1000yes
Documents
S-parameterS-parameter[Aug,2012] UPDATED(ZIP: 11KB)
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteApplication Note[Oct,2011](PDF: 1323KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
RFM12U7X