TSFF5510 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
Datasheet
3D Models (*.zip)
- Opto 3D Models - Opto 3D Models
Constructions
- Component Construction - Component Construction
General Information
- Eye Safety - Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 (identical with CIE S009)
Glossary
- Symbols and Terminology - Symbols and Terminology
- Type Designation Code - Type Designation Code
Packaging Information
- Packaging and Order Information - Packaging and Order Information
Product Literature
- Product Sheet - 830 nm, 850 nm, and 870 nm High Intensity Infrared Emitters
Quality Info
- Assembly Instructions - Assembly Instructions
- Reliability and Statistics Glossary - Reliability and Statistics Glossary
Reference Data
- Physics and Technology - Physics and Technology
Technical Papers
- Measurement Techniques - Measurement Techniques
- Datasheet
- TSFF5510 81835
- Other
- Product Sheet 81223
- TSFF5510 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 81835
- Ordering Information 33008
- Component Construction 81579
- Eye Safety 81288
- Measurement Techniques 81579
- Opto 3D Models 81321
- Packaging Information 30205
- Physics and Technology 81579
- Reliability and Statistics Glossary 81579
- Symbols IRDC 81288
- Type Designation Code 81579
