VFT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A _ BDTIC a Leading Distributor in China

VFT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VFT1060C

Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

VFT1060C

Markings

Diodes Group Body Marking - Marking

Diodes Group Body Marking 89174

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