技术特性

• Trench IGBT technology with positive temperature coefficient
• Square RBSOA
• 10 �s short circuit capability

数据手册DataSheet 下载

• VS-GT175DA120U

Application Notes

• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II

Product Literature

• Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
• Tradeshow Brochure - IGBT Power Modules

VS-GT175DA120U 93990

Application Note 94856

Packaging Information 94856

Miscellaneous 93990

Selector Guide 93281

Tradeshow Brochure 93990

VS-GT175DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 175 A 93990