BF908WR:N沟道双栅极MOSFET

耗尽型场效应晶体管,采用塑料SOT343R封装。

特性和优势
    • 高正向转移导纳
    • 高正向转移导纳输入电容比
    • 栅极和源极之间的集成式反向二极管
应用
    • 高达1 GHz的低噪声增益控制放大器
    • 专业通信设备
    • 电视调谐器
    • 采用12 V电源电压的VHF和UHF应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltage12V
IDdrain current40mA
VGS(th)gate-source threshold voltageVDS = 8 V; ID = 20 µA; gate1-2V
IDSdrain-source currentVDS = 8 V; VG1-S = 0 V; VG2-S = 4 V31527mA
Cissinput capacitancef = 1 MHz; VDS = 8 V; VGS = 4 V; Tj = 25 °C; gate13.14pF
Cossoutput capacitancef = 1 MHz; VDS = 8 V; VGS = 4 V; Tj = 25 °C1.72.2pF
|Yfs|forward transfer admittanceVDS = 8 V; VG2-S = 4 V364350mS
NFnoise figuref = 800 MHz1.52.5dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BF908WR
CMPAK-4
(SOT343R)
sot343r_posot343r_fr
sot343r_fw
Reel 7" Q1/T1量产MDBF908WR,115( 9340 314 70115 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1S, Bsource
2Ddrain
3G2gate 2
4G1gate 1
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BF908WRBF908WR,115week 52, 2002NANA
文档资料
档案名称标题类型格式日期
BF908WR (中文)N-channel dual-gate MOS-FETData sheetpdf2010-12-02
SOT343R_115CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115Packingpdf2012-11-16
sot343r_fwFootprint for wave soldering SOT343RWave solderingpdf2009-10-08
sot343r_frFootprint for reflow soldering SOT343RReflow solderingpdf2009-10-08
sot343r_poplastic surface-mounted package; reverse pinning; 4 leadsOutline drawingpdf2009-10-08
订购信息
型号订购码 (12NC)可订购的器件编号
BF908WR9340 314 70115BF908WR,115
N-channel dual-gate MOS-FET BF908WR
CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115 BFG410W
Footprint for wave soldering SOT343R BF908WR
Footprint for reflow soldering SOT343R BF908WR
plastic surface-mounted package; reverse pinning; 4 leads BF908WR