数据手册DataSheet 下载：BLA6G1011-200R 功率LDMOS晶体管.pdf
200 W LDMOS功率晶体管，用于1030 MHz至1090 MHz频率范围的航空电子应用。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLA6G1011-200R | (SOT502A) | sot502a_po | Blister pack | 激活 | Standard Marking | BLA6G1011-200R,112( 9340 636 02112 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLA6G1011-200R | BLA6G1011-200R,112 |   | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLA6G1011-200R_L-200RG_LS-200RG (中文)：Power LDMOS transistor | Data sheet | 2011-11-09 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| PCB_Design_BLA6G1011-200R_L-200RG_LS-200RG_Data-sheet：PCB Design BLA6G1011-200R & BLA6G1011L(S)-200RG (Data sheet) | Design support | zip | 2012-02-24 |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| high_power_rf_ldmos_transistors_for_avionics_applications：High Power RF LDMOS Transistors for Avionics Applications | Other type | 2009-01-13 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
| NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
| BLA6G1011-200R_ADS-2009_Model：BLA6G1011-200R ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
| BLA6G1011-200R_ADS-2011_Model：BLA6G1011-200R ADS-2011 Model | Simulation model | zip | 2014-04-10 |
| SOT502A_112：CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-11-30 | |
| SOT502A_135：Tape reel SMD; standard product orientation 12NC ending 135 | Packing | 2012-12-03 | |
| sot502a_po：flanged ceramic package; 2 mounting holes; 2 leads | Outline drawing | 2009-10-08 |
- Power LDMOS transistor BLA6G1011_LS_200R_G
- Power LDMOS transistor BLA6G1011_LS_200R_G
- Power LDMOS transistor BLA6G1011_LS_200R_G
- Power LDMOS transistor BLA6G1011_LS_200R_G
- Mounting and Soldering of RF transistors aerospace_defense
- PCB Design BLA6G1011-200R & BLA6G1011L(S)-200RG (Data sheet) BLA6G1011_LS_200R_G
- Fatigue in aluminum bond wires gan_devices
- High Power RF LDMOS Transistors for Avionics Applications avionics_ldmos_transistors
- NXP's RF Manual 18th edition OL2300NHN
- RF Power Model Library for MicroWave Office CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
- BLA6G1011-200R ADS-2009 Model BLA6G1011_LS_200R_G
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLA6G1011-200R ADS-2011 Model BLA6G1011_LS_200R_G
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
- Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
- flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
