数据手册DataSheet 下载BLD6G22LS-50 W-CDMA 2110 MHz至2170 MHz的全集成式Doherty晶体管.pdf

BLD6G22L-50和BLD22LS-50结合全集成式Doherty解决方案,采用恩智浦最先进的GEN6 LDMOS技术。该器件非常适合频率范围为2110 MHz至2170 MHz的CDMA基站应用。主器件和峰值器件、输入分离器和输出混合器集成在单个封装中。该封装包括一个栅极和漏极引脚以及两个额外引脚,其中一个用于峰值放大器偏置而另一个未连接。对于常规AB类晶体管,其只需正确的输入/输出匹配和偏置设置。

产品特点
  • 全面优化的集成式Doherty理念
  • 输入端的集成式非对称功率分配器
  • 集成式功率合成器
  • 低至0 V的峰值偏置
  • 低结点温度
  • 高效率
  • 100 %经过峰值功率测试,保证输出功率能力
  • 集成式ESD保护
  • 配对良好(主器件和峰值器件在同一芯片上)
  • 独立控制主偏置和峰值偏置
  • 内部匹配,便于使用
  • 极佳的耐用性
  • 符合欧盟2002/95/EC危害性物质限制指令
产品应用
  • 适合TD-SCDMA多载波应用的高效率RF功率放大器。
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLD6G22LS-50CDFM4 (SOT1130B)sot1130b_poBulk Pack激活Standard MarkingBLD6G22LS-50,112( 9340 635 12112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLD6G22LS-50BLD6G22LS-50,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLD6G22L-50_BLD6G22LS-50 (中文):W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorData sheetpdf2010-08-17
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave OfficeSimulation modelzip2012-06-08
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave OfficeSimulation modelpdf2012-05-22
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave OfficeSimulation modelzip2012-06-11
BLD6G22L-50_ADS-2009_Model:BLD6G22L-50 ADS-2009 ModelSimulation modelzip2013-06-11
sot1130b_po:earless flanged ceramic package; 4 leadsOutline drawingpdf2010-01-20
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor BLD6G22L-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor BLD6G22L_S_50
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
RF Power Model Library for MicroWave Office CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLD6G22L-50 ADS-2009 Model BLA6G1011_LS_200R_G
earless flanged ceramic package; 4 leads BLD6G22L_S_50