数据手册DataSheet 下载BLF2425M6LS180P 功率LDMOS晶体管.pdf

180 W LDMOS功率晶体管,用于2400 MHz至2500 MHz频率范围的各种应用(如ISM和工业加热)。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 极佳的热稳定性
  • 高效率
  • 主要用于宽带操作(2400 MHz至2500 MHz)
  • 内部匹配以方便使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 适用于2400至2500 MHz频率范围内CW应用的RF功率放大器
  • ISM和工业加热
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF2425M6LS180P(SOT539B)sot539b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF2425M6LS180P:11( 9340 661 05118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF2425M6LS180PBLF2425M6LS180P:11Always Pb-freeNANA
BLF2425M6LS180PBLF2425M6LS180P,11Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF2425M6L180P_25M6LS180P (中文):Power LDMOS transistorData sheetpdf2013-07-12
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLF2425M6L180P_25M6LS180P_Data-sheet:PCB Design BLF2425M6L(S)180P (Data sheet)Design supportzip2012-09-18
75017344:RF power as a robust and highly efficient energy sourceLeafletpdf2012-09-29
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
Power LDMOS transistor BLF2425M6L_S_180P
Power LDMOS transistor BLF2425M6L_S_180P
Power LDMOS transistor BLF2425M6L_S_180P
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLF2425M6L(S)180P (Data sheet) BLF2425M6L_S_180P
RF power as a robust and highly efficient energy source rf_energy_ism
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P