数据手册DataSheet 下载BLF2425M7LS100 功率LDMOS晶体管.pdf

100 W LDMOS功率晶体管,适合2300 MHz至2400 MHz频率的工业应用。

产品特点
  • 出色的耐用性
  • 高效率
  • 低Rth,提供极佳的热稳定性
  • 针对低内存占用量设计,提供出色的数字预失真性能
  • 内部匹配,便于使用
  • 集成式ESD保护
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 适合2300 MHz至2400 MHz频率范围内工业和多载波应用的RF功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF2425M7LS100(SOT502B)sot502b_poBlister pack激活Standard MarkingBLF2425M7LS100U( 9340 679 01112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF2425M7LS100BLF2425M7LS100UAlways Pb-freeNA
BLF2425M7LS100BLF2425M7LS100JAlways Pb-freeNA
产品技术资料
文档标题类型分类格式更新日期
BLF2425M7L100_2425M7LS100 (中文):Power LDMOS transistorData sheetpdf2014-06-24
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
SOT502B_112:CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502b_po:earless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
Power LDMOS transistor BLF2425M7L_S_100
Power LDMOS transistor BLF2425M7L_S_100
Power LDMOS transistor BLF2425M7L_S_100
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
earless flanged ceramic package; 2 leads BLS7G3135LS-200