数据手册DataSheet 下载：BLF25M612G 功率LDMOS晶体管.pdf
12 W LDMOS功率晶体管，用于2400 MHz至2500 MHz频率范围的工业、科学和医疗(ISM)应用。BLF25M612是一款驱动器，主要用于高功率CW应用，组装在高性能陶瓷封装中。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF25M612G | CDFM2 (SOT975C) | sot975c_po | Reel Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLF25M612G,118( 9340 662 21118 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF25M612G | BLF25M612G,118 |   | Always Pb-free | 1 | 1 | |||
| BLF25M612G | BLF25M612G,112 | | Always Pb-free | 1 | 1 |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF25M612_BLF25M612G (中文)：Power LDMOS transistor | Data sheet | 2014-02-24 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| PCB_Design_BLF25M612_BLF25M612G_Data-sheet：PCB Design BLF25M612(G) (Data sheet) | Design support | zip | 2014-02-27 |
| 75017344：RF power as a robust and highly efficient energy source | Leaflet | 2012-09-29 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLF25M612G_ADS-2009_Model：BLF25M612G ADS-2009 Model | Simulation model | zip | 2014-02-24 |
| BLF25M612G_ADS-2011_Model：BLF25M612G ADS-2011 Model | Simulation model | zip | 2014-04-10 |
| sot975c_po：earless flanged ceramic package; 2 leads | Outline drawing | 2008-07-09 |
- Power LDMOS transistor BLF25M612_G
- Power LDMOS transistor BLF25M612_G
- Power LDMOS transistor BLF25M612_G
- Mounting and Soldering of RF transistors aerospace_defense
- PCB Design BLF25M612(G) (Data sheet) BLF25M612_G
- RF power as a robust and highly efficient energy source rf_energy_ism
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLF25M612G ADS-2009 Model BLF25M612_G
- BLF25M612G ADS-2011 Model BLF25M612_G
- earless flanged ceramic package; 2 leads BLS6G2731-6G
