数据手册DataSheet 下载：BLF6G10LS-200RN 功率LDMOS晶体管.pdf
200 W LDMOS功率晶体管，适合700 MHz至1000 MHz频率范围的基站应用
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF6G10LS-200RN | (SOT502B) | sot502b_po | Reel Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLF6G10LS-200RN,11( 9340 632 55118 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF6G10LS-200RN | BLF6G10LS-200RN,11 |   | Always Pb-free | NA | NA | |||
| BLF6G10LS-200RN | BLF6G10LS-200RN:11 | | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF6G10-200RN_10LS-200RN (中文)：Power LDMOS transistor | Data sheet | 2010-01-21 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLF6G10-200R_ADS-2009_Model：BLF6G10-200R ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| SOT502B_112：CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 | |
| sot502b_po：earless flanged ceramic package; 2 leads | Outline drawing | 2007-05-08 |
- Power LDMOS transistor BLF6G10_LS_200RN
- Power LDMOS transistor BLF6G10_LS_200RN
- Power LDMOS transistor BLF6G10_LS_200RN
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLF6G10-200R ADS-2009 Model BLF6G10_LS_200RN
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
- earless flanged ceramic package; 2 leads BLS7G3135LS-200
