数据手册DataSheet 下载：BLF6G10S-45 功率LDMOS晶体管.pdf
45 W LDMOS功率晶体管，适合700 MHz至1000 MHz频率范围的基站应用。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF6G10S-45 | CDFM2 (SOT608B) | sot608b_po | Bulk Pack | 激活 | Standard Marking | BLF6G10S-45,112( 9340 610 36112 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF6G10S-45 | BLF6G10S-45,112 |   | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF6G10S-45 (中文)：Power LDMOS transistor | Data sheet | 2013-03-11 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLF6G10-45_ADS-2009_Model：BLF6G10-45 ADS-2009 Model | Simulation model | zip | 2013-04-02 |
| NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
| NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
| NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
| sot608b_po：ceramic earless flanged package; 2 leads | Outline drawing | 2006-12-05 |
- Power LDMOS transistor BLF6G10S-45
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLF6G10-45 ADS-2009 Model BLF6G10-45
- RF Power Model Library for MicroWave Office CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- ceramic earless flanged package; 2 leads BLS6G3135_S_20
