数据手册DataSheet 下载BLF6G22L-40BN 功率LDMOS晶体管.pdf

40 W LDMOS功率晶体管,适合2000 MHz至2200 MHz频率范围的基站应用。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 设计用于宽带操作(2000 MHz至2200 MHz)
  • 集成式电流感测
  • 内部匹配,便于使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 适合W-CDMA基站和多载波应用的RF功率放大器。
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF6G22L-40BNCDFM6 (SOT1112A)sot1112a_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF6G22L-40BN,118( 9340 643 13118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF6G22L-40BNBLF6G22L-40BN,118Always Pb-freeNANA
BLF6G22L-40BNBLF6G22L-40BN,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF6G22L-40BN (中文):Power LDMOS transistorData sheetpdf2010-08-30
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF6G22L-40BN_6G22LS-40BN_Data-sheet:PCB Design BLF6G22L(S)-40BN (Data sheet)Design supportzip2012-06-29
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot1112a_po:flanged ceramic package; 2 mounting holes; 6 leadsOutline drawingpdf2010-04-02
Power LDMOS transistor BLF6G22L-40BN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF6G22L(S)-40BN (Data sheet) BLF6G22LS-40BN
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
flanged ceramic package; 2 mounting holes; 6 leads BLF6G27L-50BN