数据手册DataSheet 下载BLF6G22LS-180PN 功率LDMOS晶体管.pdf

180 W LDMOS功率晶体管,适用于2000 MHz至2200 MHz频率范围的基站应用

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(2000 MHz至2200 MHz)
  • 内部匹配以方便使用
  • 允许最高32 V的电源电压
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • W-CDMA基站RF功率放大器
  • 2000 MHz 至2200 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF6G22LS-180PN(SOT539B)sot539b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF6G22LS-180PN:11( 9340 642 82118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF6G22LS-180PNBLF6G22LS-180PN:11Always Pb-freeNANA
BLF6G22LS-180PNBLF6G22LS-180PN,11Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF6G22-180PN_22LS-180PN (中文):Power LDMOS transistorData sheetpdf2013-07-12
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
Power LDMOS transistor BLF6G22-180PN
Power LDMOS transistor BLF6G22LS-180PN
Power LDMOS transistor BLF6G22_LS_180PN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P