数据手册DataSheet 下载:BLF6H10LS-160 功率LDMOS晶体管.pdf
160 W LDMOS RF功率晶体管用于基站应用。此晶体管可在729 MHz至960 MHz提供160 W。此器件极佳的强度和宽带性能使其成为基站应用的理想选择。
产品特点
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订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
BLF6H10LS-160 | (SOT467B) | sot467b_po | Bulk Pack | 激活 | Standard Marking | BLF6H10LS-160,112( 9340 656 58112 ) |
订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF(小时) | 潮湿敏感度等级 | MSL LF |
BLF6H10LS-160 | BLF6H10LS-160,112 | Always Pb-free | NA | NA | ||||
BLF6H10LS-160 | BLF6H10LS-160,118 | Always Pb-free | NA | NA |
文档标题 | 类型分类 | 格式 | 更新日期 |
BLF6H10L-160_6H10LS-160 (中文):Power LDMOS transistor | Data sheet | 2012-12-13 | |
AN10896:Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
75017347:Enabling the Mobile Experience | Brochure | 2013-02-05 | |
PCB_Design_BLF6H10L-160_6H10LS-160_Data-sheet:PCB Design BLF6H10L(S)-160 (Data sheet) | Design support | zip | 2012-12-04 |
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
75017565:NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
BLF6H10LS-160_ADS-2009_Model:BLF6H10LS-160 ADS-2009 Model | Simulation model | zip | 2013-06-25 |
BLF6H10LS-160_ADS-2011_Model:BLF6H10LS-160 ADS-2011 Model | Simulation model | zip | 2014-04-11 |
sot467b_po:earless ceramic package; 2 leads | Outline drawing | 2012-05-08 |