数据手册DataSheet 下载BLF7G22LS-130 功率LDMOS晶体管.pdf

130 W LDMOS功率晶体管,适用于2000 MHz至2200 MHz频率范围的基站应用。

产品特点
  • 极佳的强度
  • 低记忆效应,提供极佳数字预失真能力
  • 高效率
  • 内部匹配以方便使用
  • 集成ESD保护
  • 主要用于宽带操作(2000 MHz至2200 MHz)
  • 低Rth提供极佳的热稳定性
  • 更低的输出电容提升了Doherty应用的性能
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • W-CDMA基站RF功率放大器
  • 2000 MHz 至2200 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF7G22LS-130(SOT502B)sot502b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF7G22LS-130,118( 9340 635 01118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF7G22LS-130BLF7G22LS-130,118Always Pb-freeNANA
BLF7G22LS-130BLF7G22LS-130,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF7G22L-130_7G22LS-130 (中文):Power LDMOS transistorData sheetpdf2011-01-20
AN10885:Doherty RF performance analysis using the BLF7G22LS-130Application notepdf2010-02-25
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF7G22L-130_7G22LS-130_AN10885:PCB Design BLF7G22L(S)-130 (AN10885)Design supportzip2012-02-24
PCB_Design_BLF7G22L-130_7G22LS-130_Data-sheet:PCB Design BLF7G22L(S)-130 (Data sheet)Design supportzip2014-02-14
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF7G22-130_ADS-2009_Model:BLF7G22-130 ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave OfficeSimulation modelzip2012-06-08
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave OfficeSimulation modelpdf2012-05-22
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave OfficeSimulation modelzip2012-06-11
BLF7G22-130_ADS-2011_Model:BLF7G22-130 ADS-2011 ModelSimulation modelzip2014-04-11
SOT502B_112:CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502b_po:earless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
Power LDMOS transistor BLF7G22L_S_130
Power LDMOS transistor BLF7G22L_S_130
Power LDMOS transistor BLF7G22L_S_130
Doherty RF performance analysis using the BLF7G22LS-130 BLF7G22L_S_130
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF7G22L(S)-130 (AN10885) BLF7G22L_S_130
PCB Design BLF7G22L(S)-130 (Data sheet) BLF7G22L_S_130
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF7G22-130 ADS-2009 Model BLF7G22L_S_130
RF Power Model Library for MicroWave Office CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF7G22-130 ADS-2011 Model BLF7G22L_S_130
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
earless flanged ceramic package; 2 leads BLS7G3135LS-200