数据手册DataSheet 下载BLF7G24LS-100 功率LDMOS晶体管.pdf

100 W LDMOS功率晶体管,适用于2300 MHz至2400 MHz频率范围的基站应用。

产品特点
  • 高效率
  • 集成ESD保护
  • 低记忆效应,提供极佳数字预失真能力
  • 内部匹配以方便使用
  • 极佳的强度
  • 低Rth提供极佳的热稳定性
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 基站RF功率放大器
  • 2300 MHz 至2400 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF7G24LS-100(SOT502B)sot502b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF7G24LS-100,118( 9340 646 28118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF7G24LS-100BLF7G24LS-100,118Always Pb-freeNANA
BLF7G24LS-100BLF7G24LS-100,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF7G24L-100_7G24LS-100 (中文):Power LDMOS transistorData sheetpdf2011-07-22
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF7G24-100_ADS-2009_Model:BLF7G24-100 ADS-2009 ModelSimulation modelzip2013-02-28
SOT502B_112:CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502b_po:earless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
Power LDMOS transistor BLF7G24L_S_100
Power LDMOS transistor BLF7G24L_S_100
Power LDMOS transistor BLF7G24L_S_100
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF7G24-100 ADS-2009 Model BLF7G24L_S_100
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
earless flanged ceramic package; 2 leads BLS7G3135LS-200