数据手册DataSheet 下载BLF7G27LS-75P 功率LDMOS晶体管.pdf

75 W LDMOS功率晶体管,适用于2300 MHz至2700 MHz频率范围的基站应用。

产品特点
  • 主要用于降低记忆效应以提供极佳预失真能力
  • 内部匹配以方便使用
  • 极佳的强度
  • 集成ESD保护
  • 高效率
  • 主要用于宽带操作(2300 MHz至2700 MHz)
  • 低Rth提供极佳的热稳定性
  • 更低的输出电容提升了Doherty应用的性能
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • W-CDMA基站和多载波应用RF功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF7G27LS-75PCDFM4 (SOT1121B)sot1121b_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF7G27LS-75P,118( 9340 645 58118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF7G27LS-75PBLF7G27LS-75P,118Always Pb-freeNANA
BLF7G27LS-75PBLF7G27LS-75P,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF7G27L-75P_BLF7G27LS-75P (中文):Power LDMOS transistorData sheetpdf2010-07-15
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF7G27L-75P_ADS-2009_Model:BLF7G27L-75P ADS-2009 ModelSimulation modelzip2013-02-28
BLF7G27L-75P_ADS-2011_Model:BLF7G27L-75P ADS-2011 ModelSimulation modelzip2014-04-11
sot1121b_po:earless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
Power LDMOS transistor BLF7G27L_S_75P
Power LDMOS transistor BLF7G27L_S_75P
Power LDMOS transistor BLF7G27L_S_75P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF7G27L-75P ADS-2009 Model BLF7G27L_S_75P
BLF7G27L-75P ADS-2011 Model BLF7G27L_S_75P
earless flanged ceramic package; 4 leads BLF9G38LS-90P