数据手册DataSheet 下载：BLF888A UHF功率LDMOS晶体管.pdf

600 W LDMOS RF功率晶体管，适合广播发射器应用和工业应用。该器件凭借其出色的耐用性而非常适合数字和模拟发射器应用。

产品特点
  • 出色的耐用性（所有相位的VSWR ≥ 40 : 1）
  • 最佳热性能和可靠性，Rth(j-c) = 0.15 K/W
  • 适合CW UHF和ISM应用
  • 高功率增益
  • 高效率
  • 主要用于宽带操作（470 MHz至860 MHz）
  • 内部输入匹配实现高增益和最佳宽带操作
  • 极佳的可靠性
  • 方便的功率控制
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • UHF频段内的通信发射器应用
  • UHF频段内的工业应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF888A(SOT539A)sot539a_poBlister pack激活Standard MarkingBLF888A,112( 9340 643 42112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF（小时）潮湿敏感度等级MSL LF
BLF888ABLF888A,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF888A_BLF888AS (中文)：UHF power LDMOS transistorData sheetpdf2013-11-04
AN10896：Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
AN11062：Broadband DVB-T UHF power amplifier with the BLF888AApplication notepdf2011-05-31
AN11325：2-way Doherty amplifier with BLF888AApplication notepdf2013-11-14
PCB_Design_BLF888A_BLF888AS_AN11062_Data-sheet：PCB Design BLF888A(S) (AN11062, Data sheet)Design supportzip2012-04-23
PCB_Design_BLF888A_BLF888AS_AN11325：PCB Design BLF888A(S) (AN11325)Design supportzip2013-11-22
75017019：The most powerful LDMOS broadcast transistor delivering 125 W output powerLeafletpdf2011-05-27
75017021：NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital BroadcastingLeafletpdf2011-05-27
75017197：RF power UHF/DVB-T broadcasting at its bestLeafletpdf2011-11-29
fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565：NXP's RF Manual 18th editionSelection guidepdf2014-06-17
NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave OfficeSimulation modelzip2012-06-08
NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave OfficeSimulation modelpdf2012-05-22
BLF888A_ADS-2009_Model：BLF888A ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave OfficeSimulation modelzip2012-06-11
BLF888A_ADS-2011_Model：BLF888A ADS-2011 ModelSimulation modelzip2014-04-11
SOT539A_135：CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112：CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot539a_po：flanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
UHF power LDMOS transistor BLF888A_S
UHF power LDMOS transistor BLF888A_S
UHF power LDMOS transistor BLF888A_S
Mounting and Soldering of RF transistors aerospace_defense
Broadband DVB-T UHF power amplifier with the BLF888A BLF888A_S
2-way Doherty amplifier with BLF888A BLF888A
PCB Design BLF888A(S) (AN11062, Data sheet) BLF888A_S
PCB Design BLF888A(S) (AN11325) BLF888A_S
The most powerful LDMOS broadcast transistor delivering 125 W output power BLF888A_S
NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital Broadcasting BLF888A_S
RF power UHF/DVB-T broadcasting at its best BLF888D_S
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
RF Power Model Library for MicroWave Office CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
BLF888A ADS-2009 Model BLF888A_S
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF888A ADS-2011 Model BLF888A_S
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
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