数据手册DataSheet 下载BLF8G09LS-400PGW 功率LDMOS晶体管.pdf

400 W LDMOS功率晶体管,适合716 MHz至960 MHz频率范围的基站应用。

产品特点
  • 出色的耐用性
  • 器件可以通过视频引线提供的电源电流进行操作
  • 高效率
  • 低热阻,提供极佳的热稳定性
  • 设计用于宽带操作
  • 更低的输出电容,可增强Doherty应用中的性能
  • 去耦引线,可改进视频带宽(典型值:45 MHz)
  • 针对低内存占用量设计,提供出色的预失真性能
  • 内部匹配,便于使用
  • 集成式ESD保护
  • 最适合鸥翼式的设计
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 适合716 MHz至960 MHz频率范围内基站和多载波应用的RF功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF8G09LS-400PGWCDFM8 (SOT1242C)sot1242c_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF8G09LS-400PGWJ( 9340 680 59118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF8G09LS-400PGWBLF8G09LS-400PGWJAlways Pb-freeNA
BLF8G09LS-400PGWBLF8G09LS-400PGWQAlways Pb-freeNA
产品技术资料
文档标题类型分类格式更新日期
BLF8G09LS-400PW_8G09LS-400PGW (中文):Power LDMOS transistorData sheetpdf2014-03-24
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G09LS-400PW_8G09LS-400PGW_Data-sheet:PCB Design BLF8G09LS-400P(G)W (Data sheet)Design supportzip2014-02-24
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot1242c_po:earless flanged ceramic package; 8 leadsOutline drawingpdf2012-05-16
Power LDMOS transistor BLF8G09LS_400P_G_W
Power LDMOS transistor BLF8G09LS_400P_G_W
Power LDMOS transistor BLF8G09LS_400P_G_W
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF8G09LS-400P(G)W (Data sheet) BLF8G09LS_400P_G_W
Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
earless flanged ceramic package; 8 leads BLF8G20LS_400P_G_V