数据手册DataSheet 下载BLF8G10LS-270GV 功率LDMOS晶体管.pdf

视频带宽改善型270 W LDMOS功率晶体管,适用于790 MHz至960 MHz频率范围的基站应用。

产品特点
  • 极佳的强度
  • 高效率
  • 低Rth提供极佳的热稳定性
  • 主要用于宽带操作(790 MHz至960 MHz)
  • 更低的输出电容提升了Doherty应用的性能
  • 引脚解耦使视频带宽(典型为55 MHz)得到改善
  • 主要用于降低记忆效应以提供极佳预失真能力
  • 内部匹配以方便使用
  • 集成ESD保护
  • 优化设计的鸥翼型和直引脚版本
  • 符合有害物质限制(RoHS) Directive 2002/95/EC
产品应用
  • W-CDMA基站RF功率放大器
  • 790 MHz 至960 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF8G10LS-270GVCDFM6 (SOT1244C)sot1244c_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF8G10LS-270GVJ( 9340 669 08118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF8G10LS-270GVBLF8G10LS-270GVJAlways Pb-free11
BLF8G10LS-270GVBLF8G10LS-270GV,12Always Pb-free11
产品技术资料
文档标题类型分类格式更新日期
BLF8G10LS-270V_8G10LS-270GV (中文):Power LDMOS transistorData sheetpdf2012-12-03
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G10LS-270V_8G10LS-270GV_Data-sheet:PCB Design BLF8G10LS-270(G)V (Data sheet)Design supportzip2012-12-04
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
75017398:Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW:Factsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF8G10LS-270GV_ADS-2009_Model:BLF8G10LS-270GV ADS-2009 ModelSimulation modelzip2013-08-02
BLF8G10LS-270GV_ADS-2011_Model:BLF8G10LS-270GV ADS-2011 ModelSimulation modelzip2014-04-25
sot1244c_po:earless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-14
Power LDMOS transistor BLF8G10LS_270_G_V
Power LDMOS transistor BLF8G10LS_270_G_V
Power LDMOS transistor BLF8G10LS_270_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF8G10LS-270(G)V (Data sheet) BLF8G10LS_270_G_V
Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
Extended video bandwidth with Doherty efficiency base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
NXP's RF Manual 18th edition OL2300NHN
BLF8G10LS-270GV ADS-2009 Model BLF8G10LS_270_G_V
BLF8G10LS-270GV ADS-2011 Model BLF8G10LS_270_G_V
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V