数据手册DataSheet 下载BLF8G20LS-140V Power LDMOS transistor.pdf

140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.

产品特点
  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Decoupling leads to enable improved video bandwidth
  • Designed for broadband operation (1805 MHz to 1990 MHz)
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
产品应用
  • RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF8G20LS-140VCDFM6 (SOT1244B)sot1244b_poBulk Pack开发Standard MarkingBLF8G20LS-140VU( 9340 683 06112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF8G20LS-140VBLF8G20LS-140VUAlways Pb-freeNA
BLF8G20LS-140VBLF8G20LS-140VJAlways Pb-freeNA
产品技术资料
文档标题类型分类格式更新日期
BLF8G20LS-140V_20LS-140GV (中文):Power LDMOS transistorData sheetpdf2014-02-07
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW:Factsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot1244b_po:earless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-15
Power LDMOS transistor BLF8G20LS_140_G_V
Power LDMOS transistor BLF8G20LS_140_G_V
Power LDMOS transistor BLF8G20LS_140_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
NXP's RF Manual 18th edition OL2300NHN
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V