BLF8G20LS-210GV Power LDMOS transistor _ BDTIC 中国领先电子元器件代理商

数据手册DataSheet 下载：BLF8G20LS-210GV Power LDMOS transistor.pdf

210 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.

Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Designed for broadband operation (1805 MHz to 1990 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range

订购型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	订购器件的编号
BLF8G20LS-210GV	CDFM6 (SOT1244C)	sot1244c_po		Reel Pack, SMD, 13" Q1/T1	开发	Standard Marking	BLF8G20LS-210GVJ( 9340 683 03118 )

文档标题	类型分类	格式	更新日期
BLF8G20LS-210V_20LS-210GV (中文)：Power LDMOS transistor	Data sheet	pdf	2014-02-25
AN10896：Mounting and Soldering of RF transistors	Application note	pdf	2012-12-19
75017347：Enabling the Mobile Experience	Brochure	pdf	2013-02-05
75017301：Gen8: the next generation of LDMOS RF power for wireless infrastructures	Leaflet	pdf	2012-06-11
fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW：Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth	Other type	pdf	2012-10-23
75017565：NXP's RF Manual 18th edition	Selection guide	pdf	2014-06-17
BLF8G20LS-210GV_ADS-2009_Model：BLF8G20LS-210GV ADS-2009 Model	Simulation model	zip	2014-01-23
sot1244c_po：earless flanged ceramic package; 6 leads	Outline drawing	pdf	2012-05-14