数据手册DataSheet 下载BLF8G24LS-100GV 功率LDMOS晶体管.pdf

100 W LDMOS功率晶体管,具有改进的视频带宽,适合2300 MHz至2400 MHz频率范围的基站应用。

产品特点
  • 出色的耐用性
  • 高效率
  • 低Rth,提供极佳的热稳定性
  • 去耦引线,可改进视频带宽(典型值:110 MHz)
  • 设计用于宽带操作(2300 MHz至2400 MHz)
  • 更低的输出电容,可增强Doherty应用中的性能
  • 针对低内存占用量设计,提供出色的预失真性能
  • 内部匹配,便于使用
  • 集成式ESD保护
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 适合2300 MHz至2400 MHz频率范围内W-CDMA基站和多载波应用的RF功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF8G24LS-100GVCDFM6 (SOT1244C)sot1244c_poHorizontal, Rail Pack激活Standard MarkingBLF8G24LS-100GVQ( 9340 682 24127 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF8G24LS-100GVBLF8G24LS-100GVQAlways Pb-freeNA
BLF8G24LS-100GVBLF8G24LS-100GVJAlways Pb-freeNA
产品技术资料
文档标题类型分类格式更新日期
BLF8G24LS-100V_24LS-100GV (中文):Power LDMOS transistorData sheetpdf2014-06-27
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G24LS-100V_24LS-100GV_Data-sheet:PCB Design BLF8G24LS-100(G)V (Data sheet)Design supportzip2014-04-11
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW:Factsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF8G24LS-100GV_ADS-2012_Model:BLF8G24LS-100GV ADS-2012 ModelSimulation modelzip2014-05-02
sot1244c_po:earless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-14
Power LDMOS transistor BLF8G24LS_100_G_V
Power LDMOS transistor BLF8G24LS_100_G_V
Power LDMOS transistor BLF8G24LS_100_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF8G24LS-100(G)V (Data sheet) BLF8G24LS_100_G_V
Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
NXP's RF Manual 18th edition OL2300NHN
BLF8G24LS-100GV ADS-2012 Model BLF8G24LS_100_G_V
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V