BLF8G27LS-150V 功率LDMOS晶体管 _ BDTIC 中国领先电子元器件代理商

数据手册DataSheet 下载：BLF8G27LS-150V 功率LDMOS晶体管.pdf

视频带宽改善型150W LDMOS功率晶体管，适用于2500 MHz至2700 MHz频率范围的基站应用。

产品特点

极佳的强度
高效率
低R_th提供极佳的热稳定性
引脚解耦使视频带宽（典型为60 MHz）得到改善
更低的输出电容提升了Doherty应用的性能
主要用于降低记忆效应以提供极佳数字预失真能力
内部匹配以方便使用
集成ESD保护
鸥翼型优化设计
符合有害物质限制(RoHS)的Directive 2002/95/EC

产品应用

2500 MHz至2700 MHz频率范围内W-CDMA基站和多载波应用的RF功率放大器

订购型号

订购型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	订购器件的编号
BLF8G27LS-150V	CDFM6 (SOT1244B)	sot1244b_po		Reel Pack, SMD, 13" Q1/T1	激活	Standard Marking	BLF8G27LS-150VJ( 9340 675 38118 )
BLF8G27LS-150V	CDFM6 (SOT1244B)	sot1244b_po		Horizontal, Rail Pack	撤回替代产品	Standard Marking	BLF8G27LS-150VQ( 9340 675 38127 )

品质、可靠性及RoHS化学成分

订购型号	订购器件的编号	RoHS / RHF	无铅开始日期	EFR	IFR (FIT)	MTBF（小时）	潮湿敏感度等级	MSL LF
BLF8G27LS-150V	BLF8G27LS-150VJ		Always Pb-free		NA
BLF8G27LS-150V	BLF8G27LS-150VU		Always Pb-free		NA
BLF8G27LS-150V	BLF8G27LS-150VQ		Always Pb-free		NA

产品技术资料

文档标题	类型分类	格式	更新日期
BLF8G27LS-150V_8G27LS-150GV (中文)：Power LDMOS transistor	Data sheet	pdf	2013-06-26
AN10896：Mounting and Soldering of RF transistors	Application note	pdf	2012-12-19
75017347：Enabling the Mobile Experience	Brochure	pdf	2013-02-05
PCB_Design_BLF8G27LS-150V_8G27LS-150GV_Data-sheet：PCB Design BLF8G27LS-150(G)V (Data sheet)	Design support	zip	2013-06-18
75017301：Gen8: the next generation of LDMOS RF power for wireless infrastructures	Leaflet	pdf	2012-06-11
75017398：Extended video bandwidth with Doherty efficiency	Leaflet	pdf	2013-03-21
fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW：Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth	Other type	pdf	2012-10-23
75017565：NXP's RF Manual 18th edition	Selection guide	pdf	2014-06-17
sot1244b_po：earless flanged ceramic package; 6 leads	Outline drawing	pdf	2012-05-15

Power LDMOS transistor BLF8G27LS_150_G_V

Power LDMOS transistor BLF8G27LS_150_G_V

Power LDMOS transistor BLF8G27LS_150_G_V

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

PCB Design BLF8G27LS-150(G)V (Data sheet) BLF8G27LS_150_G_V

Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G

Extended video bandwidth with Doherty efficiency base_stations

Fatigue in aluminum bond wires gan_devices

Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V

NXP's RF Manual 18th edition OL2300NHN

earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V

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