数据手册DataSheet 下载BLF988 功率LDMOS晶体管.pdf

600W LDMOS RF功率晶体管,适合发射器应用和工业应用。该器件凭借其出色的耐用性而非常适合数字和模拟发射器应用。

产品特点
  • 极佳的强度(所有相位的VSWR ≥ 40 : 1)
  • 最佳热性能和可靠性,Rth(j-c) = 0.15 K/W
  • 高功率增益
  • 高效率
  • 设计用于宽带操作(400 MHz至1000 MHz)
  • 内部输入匹配,可实现高增益和最佳宽带操作
  • 极佳的可靠性
  • 方便的功率控制
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 通信发射器应用
  • 工业应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF988(SOT539A)sot539a_poBlister pack激活Standard MarkingBLF988,112( 9340 662 86112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF988BLF988,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF988_BLF988S (中文):Power LDMOS transistorData sheetpdf2013-08-01
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLF988_BLF988S_Data-sheet:PCB Design BLF988(S) (Data sheet)Design supportzip2013-05-17
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF988_MWO_Model:BLF988 MWO ModelSimulation modelzip2013-11-21
SOT539A_135:CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112:CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot539a_po:flanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
Power LDMOS transistor BLF988_S
Power LDMOS transistor BLF988_S
Power LDMOS transistor BLF988_S
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLF988(S) (Data sheet) BLF988_S
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF988 MWO Model BLF988_S
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P