数据手册DataSheet 下载:BLP8G10S-45P 功率LDMOS晶体管.pdf
BLP8G10S-45P和BLP8G10S-45PG是双路径45 W LDMOS功率晶体管,适合700 MHz 至1000 MHz频率的基站应用。
产品特点
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订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
BLP8G10S-45P | HSOP4F (SOT1223-1) | sot1223-1_po | Reel Dry Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLP8G10S-45PY( 9340 673 71518 ) | |
BLP8G10S-45P | HSOP4F (SOT1223-1) | sot1223-1_po | Reel Pack, SMD, 13" Q1/T1 | 撤回替代产品 | Standard Marking | BLP8G10S-45PJ( 9340 673 71118 ) |
订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF(小时) | 潮湿敏感度等级 | MSL LF |
BLP8G10S-45P | BLP8G10S-45PY | 3 | 3 | |||||
BLP8G10S-45P | BLP8G10S-45PJ | 3 | 3 |
文档标题 | 类型分类 | 格式 | 更新日期 |
BLP8G10S-45P_8G10S-45PG (中文):power LDMOS transistor | Data sheet | 2013-07-25 | |
AN11183:Mounting and soldering of RF transistors in over-molded plastic packages | Application note | 2012-11-06 | |
75017347:Enabling the Mobile Experience | Brochure | 2013-02-05 | |
PCB_Design_BLP8G10S-45P_8G10S-45PG_Data-sheet:PCB Design BLP8G10S-45P(G) (Data sheet) | Design support | zip | 2013-07-30 |
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructures | Leaflet | 2012-06-11 | |
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
75017565:NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
sot1223-1_po:plastic, heatsink small outline package; 4 leads(flat) | Outline drawing | 2012-05-03 |