数据手册DataSheet 下载BLP8G10S-45P 功率LDMOS晶体管.pdf

BLP8G10S-45P和BLP8G10S-45PG是双路径45 W LDMOS功率晶体管,适合700 MHz 至1000 MHz频率的基站应用。

产品特点
  • 高效率
  • 出色的耐用性
  • 设计用于宽带操作(700 MHz至1000 MHz)
  • 极佳的热稳定性
  • 高功率增益
  • 集成式ESD保护
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • W-CDMA
  • LTE
  • GSM
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLP8G10S-45PHSOP4F (SOT1223-1)sot1223-1_poReel Dry Pack, SMD, 13" Q1/T1激活Standard MarkingBLP8G10S-45PY( 9340 673 71518 )
BLP8G10S-45PHSOP4F (SOT1223-1)sot1223-1_poReel Pack, SMD, 13" Q1/T1撤回替代产品Standard MarkingBLP8G10S-45PJ( 9340 673 71118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLP8G10S-45PBLP8G10S-45PY33
BLP8G10S-45PBLP8G10S-45PJ33
产品技术资料
文档标题类型分类格式更新日期
BLP8G10S-45P_8G10S-45PG (中文):power LDMOS transistorData sheetpdf2013-07-25
AN11183:Mounting and soldering of RF transistors in over-molded plastic packagesApplication notepdf2012-11-06
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLP8G10S-45P_8G10S-45PG_Data-sheet:PCB Design BLP8G10S-45P(G) (Data sheet)Design supportzip2013-07-30
75017301:Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot1223-1_po:plastic, heatsink small outline package; 4 leads(flat)Outline drawingpdf2012-05-03
power LDMOS transistor BLP8G10S_45P_G
power LDMOS transistor BLP8G10S_45P_G
power LDMOS transistor BLP8G10S_45P_G
Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
Enabling the Mobile Experience rf
PCB Design BLP8G10S-45P(G) (Data sheet) BLP8G10S_45P_G
Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
plastic, heatsink small outline package; 4 leads(flat) BLP8G20S-80P