数据手册DataSheet 下载BLS6G2735LS-30 S波段LDMOS晶体管.pdf

30 W LDMOS功率晶体管,适用于2.7 GHz至3.5 GHz范围的S波段雷达应用。

产品特点
  • 集成ESD保护
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(2.7 GHz至3.5 GHz)
  • 内部匹配以方便使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 2.7 GHz至3.5 GHz频率范围内的S波段雷达应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLS6G2735LS-30CDFM2 (SOT1135B)sot1135b_poBulk Pack激活Standard MarkingBLS6G2735LS-30,112( 9340 659 72112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLS6G2735LS-30BLS6G2735LS-30,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLS6G2735L-30_6G2735LS-30 (中文):S-band LDMOS transistorData sheetpdf2012-09-24
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLS6G2735L-30_6G2735LS-30_Data-sheet:PCB Design BLS6G2735L(S)-30 (Data sheet)Design supportzip2012-09-04
75017399:BLS6G2735L(S)-30: Cover the entire S-band with one 30 W driverLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLS6G2735-30_ADS-2009_Model:BLS6G2735-30 ADS-2009 ModelSimulation modelzip2013-08-02
BLS6G2735-30_ADS-2012_Model:BLS6G2735-30 ADS-2012 ModelSimulation modelzip2014-05-02
sot1135b_po:earless flanged ceramic package; 2 leadsOutline drawingpdf2010-01-20
S-band LDMOS transistor BLS6G2735L_S_30
S-band LDMOS transistor BLS6G2735L_S_30
S-band LDMOS transistor BLS6G2735L_S_30
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLS6G2735L(S)-30 (Data sheet) BLS6G2735L_S_30
BLS6G2735L(S)-30: Cover the entire S-band with one 30 W driver aerospace_defense
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLS6G2735-30 ADS-2009 Model BLS6G2735L_S_30
BLS6G2735-30 ADS-2012 Model BLS6G2735L_S_30
earless flanged ceramic package; 2 leads BLS6G2735L_S_30