数据手册DataSheet 下载BLS7G2729LS-350P LDMOS S频段雷达功率晶体管.pdf

350 W LDMOS功率晶体管,适合2.7 GHz至2.9 GHz频率范围内的S频段雷达应用。

产品特点
  • 高效率
  • 极佳的耐用性
  • 设计用于S频段操作(2.7 GHz至2.9 GHz)
  • 极佳的热稳定性
  • 方便的功率控制
  • 集成ESD保护
  • 脉冲格式灵活性高
  • 内部匹配,便于使用
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 2.7 GHz至2.9 GHz频率范围内的S频段雷达应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLS7G2729LS-350P(SOT539B)sot539b_poBulk Pack激活Standard MarkingBLS7G2729LS-350P,1( 9340 656 61112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLS7G2729LS-350PBLS7G2729LS-350P,1Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLS7G2729L-350P_LS-350P (中文):LDMOS S-band radar power transistorData sheetpdf2014-05-16
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLS7G2729L-350P_LS-350P_Data-sheet:PCB Design BLS7G2729L(S)-350P (Data sheet)Design supportzip2013-08-29
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLS7G2729-350P_ADS-2009_Model:BLS7G2729-350P ADS-2009 ModelSimulation modelzip2013-04-01
BLS7G2729-350P_ADS-2012_Model:BLS7G2729-350P ADS-2012 ModelSimulation modelzip2014-05-02
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
LDMOS S-band radar power transistor BLS7G2729L_S_350P
LDMOS S-band radar power transistor BLS7G2729L_S_350P
LDMOS S-band radar power transistor BLS7G2729L_S_350P
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLS7G2729L(S)-350P (Data sheet) BLS7G2729L_S_350P
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLS7G2729-350P ADS-2009 Model BLS7G2729L_S_350P
BLS7G2729-350P ADS-2012 Model BLS7G2729L_S_350P
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P