数据手册DataSheet 下载：BUK653R2-55C N沟道TrenchMOS中间电平FET.pdf

中间电平栅极驱动N沟道增强型场效应晶体管(FET)，采用塑料封装，使用先进的TrenchMOS技术。该产品设计符合相应AEC Q101标准，适用于高性能汽车电子应用。

产品特点
  • 符合AEC Q101标准
  • 适用于中间电平栅极驱动源
  • 额定温度为175 °C，适用于对热性能要求苛刻的环境
产品应用
  • 12 V和24 V汽车系统
  • 电动和电动液压助力转向
  • 马达、灯具和螺线管控制
  • 微型混合动力起止应用
  • 传动控制
  • 超高性能电源开关
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BUK653R2-55CTO-220AB (SOT78A)sot078a_poHorizontal, Rail Pack激活BUK653R2-55CBUK653R2-55C,127( 9340 644 68127 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF（小时）潮湿敏感度等级MSL LF
BUK653R2-55CBUK653R2-55C,127Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BUK653R2-55C (中文)：N-channel TrenchMOS intermediate level FETData sheetpdf2010-09-06
AN10273：Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication notepdf2010-03-17
AN11158：Understanding power MOSFET data sheet parametersApplication notepdf2014-02-04
AN11160：Designing RC SnubbersApplication notepdf2012-10-01
AN11156：Using Power MOSFET Zth CurvesApplication notepdf2012-10-10
AN11243：Failure signature of Electrical Overstress on Power MOSFETsApplication notepdf2012-10-29
AN11158_ZH：Understanding power MOSFET data sheet parametersApplication notepdf2013-11-08
AN11261：Using RC Thermal ModelsApplication notepdf2014-05-19
75016982：Leading-edge Automotive Power MOSFETsBrochurepdf2010-09-15
75017357：NXP's Power MOSFET Selection Guide 2013: Smaller, faster, coolerSelection guidepdf2014-06-03
75017462：Automotive Grade Power MOSFETs: Performance, Quality, ReliabilitySelection guidepdf2014-02-03
75017462_zh_CN：汽车应用功率MOSFET: 性能、品质、可靠性 (chinese version)Selection guidepdf2014-01-28
BUK653R2-55C_RC_Thermal_Model：BUK653R2-55C RC Thermal ModelThermal designpdf2012-01-02
BUK653R2-55C：BUK653R2-55C Thermal modelThermal modelpdml2010-09-24
sot078a_po：plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABOutline drawingpdf2005-03-13
N-channel TrenchMOS® intermediate level FET buk653r2-55c
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Using RC Thermal Models BUK7M12-60E
Leading-edge Automotive Power MOSFETs BUK7E2R3-40C
NXP's Power MOSFET Selection Guide 2013: Smaller, faster, cooler PSMN9R8-30MLC
Automotive Grade Power MOSFETs: Performance, Quality, Reliability BUK9Y8R7-60E
汽车应用功率MOSFET: 性能、品质、可靠性 (chinese version) BUK9Y8R7-60E
BUK653R2-55C RC Thermal Model BUK653R2-55C
BUK653R2-55C Thermal model BUK653R2-55C
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BUK9575-55A
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