数据手册DataSheet 下载：BUK7L06-34ARC N沟道TrenchPLUS标准电平FET.pdf
标准电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。这些器件包括用于钳位和静电放电(ESD)保护的内部栅极电阻和TrenchPLUS二极管。该产品设计符合相应AEC标准，适用于汽车电子关键型应用。
产品特点
| 产品应用
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产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BUK7L06-34ARC (中文)：N-channel TrenchPLUS standard level FET | Data sheet | 2009-02-18 | |
| AN10273：Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2010-03-17 | |
| AN11158：Understanding power MOSFET data sheet parameters | Application note | 2014-02-04 | |
| AN11160：Designing RC Snubbers | Application note | 2012-10-01 | |
| AN11156：Using Power MOSFET Zth Curves | Application note | 2012-10-10 | |
| AN11243：Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2012-10-29 | |
| AN11158_ZH：Understanding power MOSFET data sheet parameters | Application note | 2013-11-08 | |
| AN11261：Using RC Thermal Models | Application note | 2014-05-19 | |
| 75017357：NXP's Power MOSFET Selection Guide 2013: Smaller, faster, cooler | Selection guide | 2014-06-03 | |
| sot078c_po：plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads | Outline drawing | 2003-01-20 |
- N-channel TrenchPLUS standard level FET buk7l06-34arc
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- Using Power MOSFET Zth Curves BUK7M12-60E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Using RC Thermal Models BUK7M12-60E
- NXP's Power MOSFET Selection Guide 2013: Smaller, faster, cooler PSMN9R8-30MLC
- plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads BUK7L11-34ARC
