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BUK9107-55ATE：N沟道TrenchPLUS逻辑电平FET

逻辑电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。这些器件包括用于静电放电(ESD)保护和温度感测的TrenchPLU二极管。该产品设计符合相应AEC标准，适用于汽车电子关键型应用。

特性和优势
    • 符合AEC-Q101标准
    • 集成式温度传感器，因而能实现响应性温度监控
    • 集成式保护二极管，抗静电性能强大
    • 低导通电阻，因而导通损耗很小
应用
    • 12 V和24 V高功率马达驱动
    • 汽车和通用电源开关
    • 电动助力转向(EPAS)
    • 适用于灯具的受保护驱动
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltage25 °C ≤ Tj ≤ 175 °C55V
IDdrain currentVGS = 5 V; Tmb = 25 °C [0]75A
Ptottotal power dissipationTmb = 25 °C272W
RDSondrain-source on-state resistanceVGS = 10 V; ID = 50 A; Tj = 25 °C5.26.2mΩ
RDSondrain-source on-state resistanceVGS = 5 V; ID = 50 A; Tj = 25 °C5.87mΩ
QGDgate-drain chargeVGS = 5 V; ID = 50 A; VDS = 44 V; Tj = 25 °C4.7nC
EDS(AL)Snon-repetitive drain-source avalanche energyID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped500mJ
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BUK9107-55ATE
D2PAK
(SOT426)		sot426_posot426_frReel 13" Q1/T1量产BUK9107-55ATEBUK9107-55ATE,118( 9340 569 82118 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ggate
2Aanode
3Ddrain
4Kcathode
5Ssource
mbDmounting base; connected to drain
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BUK9107-55ATEBUK9107-55ATE,11811
文档资料
档案名称标题类型格式日期
BUK9107-55ATE (中文)N-channel TrenchPLUS logic level FETData sheetpdf2009-02-16
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication notepdf2010-03-17
AN10874LFPAK MOSFET thermal design guideApplication notepdf2011-01-27
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication notepdf2012-09-14
AN11113LFPAK MOSFET thermal design guide - Part 2Application notepdf2011-11-16
AN11158Understanding power MOSFET data sheet parametersApplication notepdf2014-02-04
AN11160Designing RC SnubbersApplication notepdf2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication notepdf2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication notepdf2012-10-29
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication notepdf2013-11-08
AN11261Using RC Thermal ModelsApplication notepdf2014-05-19
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application notepdf2014-05-22
AN11599Using power MOSFETs in parallelApplication notepdf2015-07-07
75017631Discretes Semiconductors Selection Guide 2015Selection guidepdf2015-01-09
75017643Automotive MOSFET Selection Guide 2015: Performance, Quality, ReliabilitySelection guidepdf2015-03-23
SOT426_118Tape reel SMD; standard product orientation; 12NC ending 118Packingpdf2012-11-22
sot426_frFootprint for reflow soldering SOT426Reflow solderingpdf2009-10-08
sot426_poplastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped)Outline drawingpdf2009-10-08
订购信息
型号订购码 (12NC)可订购的器件编号
BUK9107-55ATE9340 569 82118BUK9107-55ATE,118
N-channel TrenchPLUS logic level FET buk9107-55ate
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using power MOSFETs in parallel BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability BUK7M12-60E
D2PAK-5; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or... BUK7107-55AIE
Footprint for reflow soldering SOT426 BUK9107-55ATE
plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) BUK9107-55ATE
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