BUK9506-75B：N沟道TrenchMOS逻辑电平FET _ BDTIC 中国领先电子元器件代理商

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BUK9506-75B：N沟道TrenchMOS逻辑电平FET

逻辑电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。该产品设计符合相应AEC标准，适用于汽车电子关键型应用。

特性和优势

符合AEC Q101标准
低导通电阻，因而导通损耗很小
适用于逻辑电平栅极驱动源
额定温度为175 °C，适用于对热性能要求苛刻的环境

应用

12 V、24 V和42 V负载
汽车系统
通用电源开关
马达、灯具和螺线管

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
V_DS	drain-source voltage	T_j ≥ 25 °C; T_j ≤ 175 °C			75	V
I_D	drain current	V_GS = 5 V; T_mb = 25 °C ^[0]			75	A
P_tot	total power dissipation	T_mb = 25 °C			300	W
R_DSon	drain-source on-state resistance	V_GS = 10 V; I_D = 25 A; T_j = 25 °C		4.7	5.5	mΩ
R_DSon	drain-source on-state resistance	V_GS = 5 V; I_D = 25 A; T_j = 25 °C		5.2	6.1	mΩ
Q_GD	gate-drain charge	V_GS = 5 V; I_D = 25 A; V_DS = 60 V; T_j = 25 °C		37		nC
E_DS(AL)S	non-repetitive drain-source avalanche energy	I_D = 75 A; V_sup ≤ 75 V; R_GS = 50 Ω; V_GS = 5 V; T_j(init) = 25 °C; unclamped			852	mJ

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BUK9506-75B	TO-220AB (SOT78A)	sot078a_po		Horizontal, Rail Pack	量产	BUK9506-75B	BUK9506-75B,127( 9340 571 11127 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	G	gate
2	D	drain
3	S	source
mb	D	mounting base; connected to drain

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BUK9506-75B	BUK9506-75B,127		week 1, 2005	NA	NA

文档资料

档案名称	标题	类型	格式	日期
BUK9506-75B (中文)	N-channel TrenchMOS logic level FET	Data sheet	pdf	2011-02-07
AN10273	Power MOSFET single-shot and repetitive avalanche ruggedness rating	Application note	pdf	2010-03-17
AN10874	LFPAK MOSFET thermal design guide	Application note	pdf	2011-01-27
AN10874_ZH	LFPAK MOSFET thermal design guide, Chinese version	Application note	pdf	2012-09-14
AN11113	LFPAK MOSFET thermal design guide - Part 2	Application note	pdf	2011-11-16
AN11158	Understanding power MOSFET data sheet parameters	Application note	pdf	2014-02-04
AN11160	Designing RC Snubbers	Application note	pdf	2012-10-01
AN11156	Using Power MOSFET Zth Curves	Application note	pdf	2012-10-10
AN11243	Failure signature of Electrical Overstress on Power MOSFETs	Application note	pdf	2012-10-29
AN11158_ZH	Understanding power MOSFET data sheet parameters	Application note	pdf	2013-11-08
AN11261	Using RC Thermal Models	Application note	pdf	2014-05-19
AN11113_ZH	LFPAK MOSFET thermal design guide - Part 2	Application note	pdf	2014-05-22
AN11599	Using power MOSFETs in parallel	Application note	pdf	2015-07-07
75017631	Discretes Semiconductors Selection Guide 2015	Selection guide	pdf	2015-01-09
75017643	Automotive MOSFET Selection Guide 2015: Performance, Quality, Reliability	Selection guide	pdf	2015-03-23
75017651	车用 MOSFET 选型指南2015版 (chinese version)	Selection guide	pdf	2015-04-17
sot078a_po	plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB	Outline drawing	pdf	2005-03-13

订购信息

型号	订购码 (12NC)	可订购的器件编号
BUK9506-75B	9340 571 11127	BUK9506-75B,127

N-channel TrenchMOS® logic level FET buk9506-75b

Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

Understanding power MOSFET data sheet parameters BUK7M12-60E

Designing RC Snubbers BUK7M12-60E

Using Power MOSFET Zth Curves BUK7M12-60E

Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E

Understanding power MOSFET data sheet parameters BUK7K6R8-40E

Using RC Thermal Models BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using power MOSFETs in parallel BUK7M12-60E

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability BUK7M12-60E

车用 MOSFET 选型指南2015版 (chinese version) BUK7E8R3-40E

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BUK9575-55A

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