OM7898:BGU8M1UK LTE LNA evaluation board
The BGU8M1UK LTE LNA evaluation board simplifies the evaluation of the BGU8M1UK LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGU8M1UK, the input series inductor, input DC blocking capacitor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8M1UK can operate from a 1.5 V to 3.1 V single supply and consumes about 4.3 mA.
特性- The BGU8M1UK is optimized for 1805 MHz to 2200 MHz:
Noise figure (NF) = 0.80 dB
Gain = 16 dB
High input 1 dB compression point of -4 dBm
High out of band IP3i of 2 dBm
Supply voltage 1.5 V to 3.1 V
Optimized performance at low 5 mA supply current
Power-down mode current consumption < 1 µA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor, input DC blocking capacitor and one supply decoupling capacitor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
0.65 mm x 0.44 mm x 0.2 mm; 0.22 mm pitch
180 GHz transit frequency - SiGe:C technology
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订购信息
型号 | 订购码 (12NC) | 可订购的器件编号 | 产品状态 |
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OM7898/BGU8M1UK | 9340 691 58598 | OM7898/BGU8M1UKUL | Active |
相关产品
型号 | 描述 | 产品状态 |
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BGU8M1UK | SiGe:C Low Noise Amplifier MMIC for LTE | Production |