PHPT60610PY: 60 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT60610NY

SOT669
数据手册 (1)
名称/描述Modified Date
60 V, 10 A PNP high power bipolar transistor (REV 1.0) PDF (243.0 kB) PHPT60610PY [English]27 May 2015
应用说明 (1)
名称/描述Modified Date
Relay replacement by NXP® high-power bipolar transistors in LFPAK56 (REV 1.0) PDF (1.3 MB) AN11641 [English]21 May 2015
手册 (1)
名称/描述Modified Date
Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 (REV 1.0) PDF (1.4 MB) 75017639 [English]20 Feb 2015
封装信息 (1)
名称/描述Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]09 Sep 2016
SPICE
订购信息
型号状态Package versionPackage name大小 (mm)transistor polarityTransistor polaritynumber of transistorsPtot [max] (mW)VCEO [max] (V)IC [max] (A)ICM [max] (A)hFE [min]hFE [typ]fT [min] (MHz)fT [typ] (MHz)RCEsat [typ] (mΩ)RCEsat [max] (mΩ)VCEsat [max] (mV)
PHPT60610PYActiveSOT669LFPAK56; Power-SO83.95 x 4.9 x 1.1PNP125000-60-10-20120215852947-470
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFEFRIFR(FIT)MTBF(小时)MSLMSL LF
PHPT60610PYSOT669Reel 7" Q1/T1ActivePHPT60610PYX (9340 685 84115)0610PABPHPT60610PY153.00.711.41E911
60 V, 10 A PNP high power bipolar transistor PHPT60610PY
Relay replacement by NXP® high-power bipolar transistors in LFPAK56 PHPT61003PY
Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 PHPT61003PY
PHPT60610PY SPICE model PHPT60610PY
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY
PSMN9R5-30YLC