PMDPB85UPE: 20 V双P沟道Trench MOSFET
双小信号P沟道增强型场效应晶体管(FET)，采用使用Trench MOSFET技术的无引脚中等功率DFN2020-6 (SOT1118)表面贴装器件(SMD)塑料封装。
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数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 20 V dual P-channel Trench MOSFET (REV 1.0) PDF (874.0 kB) PMDPB85UPE [English] | 20 Jun 2012 |
应用说明 (11)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
| MOSFET load switch PCB with thermal measurement (REV 1.0) PDF (881.0 kB) AN11304 [English] | 28 Jan 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
手册 (2)
| 名称/描述 | Modified Date |
|---|---|
| 适用于便携设备和移动电话... (REV 1.0) PDF (4.9 MB) 939775017444_ZH [English] | 28 Oct 2013 |
| Discretes for portable devices and mobile handsets (REV 1.1) PDF (3.9 MB) 939775017444 [English] | 04 Sep 2013 |
选型工具指南 (3)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
| Advanced cross reference list DFN* MOSFETs (REV 1.1) PDF (248.0 kB) 75017313 [English] | 19 Jun 2012 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (198.0 kB) SOT1118 [English] | 08 Feb 2016 |
包装 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020-6; reel pack; standard orientation; 12NC ending 115 (REV 1.0) PDF (196.0 kB) SOT1118_115 [English] | 07 Nov 2012 |
可靠性与质量信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| PMDPB85UPE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMDPB85UPE_1 [English] | 31 Jan 2015 |
| PMDPB85UPE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMDPB85UPE_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
支持信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
SPICE
- PMDPB85UPE Spice model (REV 1.0) lib PMDPB85UPE_17_05_2012 12/13/2013
订购信息
| 型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Qr [typ] (nC) | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDPB85UPE | Active | SOT1118 | DFN2020-6 | P | 2 | -20 | 103 | 146 | 150 | -3.7 | 1 | 5.4 | 5.4 | 0.515 | -0.7 | N | 514 | 78 | 2012-06-20 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDPB85UPE | | SOT1118 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PMDPB85UPE,115 (9340 668 43115) | 2C | PMDPB85UPE |    | Always Pb-free | 234.0 | 1.08 | 9.26E8 | 1 | 1 |
- 20 V dual P-channel Trench MOSFET PMDPB85UPE
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- MOSFET load switch PCB with thermal measurement pmpb40sna
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- 适用于便携设备和移动电话... ptvsxs1ur_automotive
- Discretes for portable devices and mobile handsets ptvsxs1ur_automotive
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Advanced cross reference list DFN* MOSFETs PMZB370UNE
- PMDPB85UPE NXP® Product Reliability PMDPB85UPE
- PMDPB85UPE NXP® Product Quality PMDPB85UPE
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- PMDPB85UPE Spice model PMDPB85UPE
- DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm PBSS5260PAP
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- DFN2020-6; reel pack; standard orientation; 12NC ending 115 PBSS5260PAP
- PMFPB8040XP
