PSMN4R2-30MLD: N沟道30 V，4.2 mΩ逻辑电平MOSFET，采用LFPAK33封装，使用NextPowerS3技术 _ BDTIC 中国领先电子元器件代理商

PSMN4R2-30MLD: N沟道30 V，4.2 mΩ逻辑电平MOSFET，采用LFPAK33封装，使用NextPowerS3技术

逻辑电平栅极驱动N沟道增强型MOSFET，采用LFPAK33封装。NextPowerS3产品组合利用恩智浦特有的“SchottkyPlus”技术，提供高频率低峰值性能，通常只有集成肖特基或类肖特基二极管的MOSFET才具有这种性能，并且没有令人烦恼的高漏电流问题。NextPowerS3特别适合于高开关频率下的高效应用。

sot1210_3d

数据手册 (1)

名称/描述	Modified Date
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology (REV 1.2) PDF (277.0 kB) PSMN4R2-30MLD [English]	11 Aug 2015

应用说明 (6)

名称/描述	Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]	13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]	22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]	19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]	14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]	16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]	27 Jan 2011

手册 (1)

名称/描述	Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]	18 May 2015

选型工具指南 (2)

名称/描述	Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]	17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]	11 Sep 2014

封装信息 (1)

名称/描述	Modified Date
Plastic single ended surface mounted package (LFPAK33); 8 leads (REV 1.1) PDF (255.0 kB) SOT1210 [English]	18 Oct 2016

包装 (1)

名称/描述	Modified Date
LFPAK33; Reel pack, SMD, 7' Q1/T1 Standard product orientation Orderable part number ending, 115 or... (REV 1.0) PDF (222.0 kB) SOT1210_115 [English]	31 Mar 2014

支持信息 (1)

名称/描述	Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]	07 Aug 2015

SPICE

PSMN4R2-30MLD Spice model (REV 1.0) lib PSMN4R2-30MLD_1 2/3/2014

Thermal design

PSMN4R2-30MLD Thermal design model (REV 1.0) PDF PSMN4R2-30MLD_RC_THERMAL_MODEL 11/3/2015

Thermal model

PSMN4R2-30MLD Thermal model (REV 1.0) pdml PSMN4R2-30MLD_1_2 2/3/2014

订购信息

型号	状态	Package version	Package name	Channel type	Number of transistors	V_DS [max] (V)	R_DSon [max] @ V_GS = 10 V (mΩ)	R_DSon [max] @ V_GS = 5 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	R_DSon [max] @ V_GS = 2.5 V (mΩ)	Q_GD [typ] (nC)	T_j [max] (°C)	Q_G(tot) [typ] (nC)	I_D [max] (A)	QG(tot) [typ] @ VGS = 4.5 V (nC)	Q_r [typ] (nC)	V_GSth [typ] (V)	P_tot [max] (W)	QG(tot) [typ] @ VGS = 10 V (nC)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	日期
PSMN4R2-30MLD	Active	SOT1210	LFPAK33	N	1	30	4.3		5.7		3.1	175	9.2	70	9.2	15	1.7	65	19.6	N	1197	848	2013-09-06

封装环保信息

产品编号	封装说明	Outline Version	回流/波峰焊接	包装	产品状态	部件编号订购码 (12NC)	Marking	化学成分	RoHS / 无铅 / RHF	MSL	MSL LF
PSMN4R2-30MLD		SOT1210		Reel 7" Q1/T1	Active	PSMN4R2-30MLDX (9340 679 71115)	4D230L	PSMN4R2-30MLD		1	1

N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN4R2-30MLD

Using power MOSFETs in parallel BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using RC Thermal Models BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW

Power MOSFET frequently asked questions and answers BUK7M12-60E

PSMN4R2-30MLD Spice model PSMN4R2-30MLD

PSMN4R2-30MLD Thermal design model PSMN4R2-30MLD

PSMN4R2-30MLD Thermal model PSMN4R2-30MLD

Plastic single ended surface mounted package (LFPAK33); 8 leads BUK7M12-60E

LFPAK33; Reel pack, SMD, 7' Q1/T1 Standard product orientation Orderable part number ending, 115 or... BUK7M12-60E

PSMN9R8-30MLC

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