数据手册DataSheet 下载：PSMN5R0-100XS N沟道100 V 5 mΩ标准电平MOSFET，采用TO220F (SOT186A)封装.pdf
标准电平N沟道MOSFET，采用TO220F (SOT186A)封装，额定工作温度为175C。该产品设计适用于各种工业、通信及家用设备。
产品特点
| 产品应用
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订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| PSMN5R0-100XS | TO-220F (SOT186A) | sot186a_po | Horizontal, Rail Pack | 激活 | PSMN5R0-100XS | PSMN5R0-100XS,127( 9340 660 39127 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| PSMN5R0-100XS | PSMN5R0-100XS,127 |   | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| PSMN5R0-100XS (中文)：N-channel 100V 5 mOhm standard level MOSFET in TO220F (SOT186A) | Data sheet | 2012-07-03 | |
| AN10273：Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2010-03-17 | |
| AN11158：Understanding power MOSFET data sheet parameters | Application note | 2014-02-04 | |
| AN11160：Designing RC Snubbers | Application note | 2012-10-01 | |
| AN11156：Using Power MOSFET Zth Curves | Application note | 2012-10-10 | |
| AN11243：Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2012-10-29 | |
| AN11158_ZH：Understanding power MOSFET data sheet parameters | Application note | 2013-11-08 | |
| PSMN5R0-100XS：PSMN5R0-100XS Spice model | SPICE model | lib | 2012-06-15 |
| sot186a_po：plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" | Outline drawing | 2009-10-08 |
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- Using Power MOSFET Zth Curves BUK7M12-60E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- PSMN5R0-100XS Spice model PSMN5R0-100XS
- plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" TYN20X-800T
