数据手册DataSheet 下载:PSMN5R6-100XS N沟道100 V 5.6 mΩ标准电平MOSFET,采用TO220F (SOT186A)封装.pdf
标准电平N沟道MOSFET,采用TO220F (SOT186A)封装,额定工作温度为175C。该产品设计适用于各种工业、通信及家用设备。
产品特点
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订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
PSMN5R6-100XS | TO-220F (SOT186A) | sot186a_po | Horizontal, Rail Pack | 激活 | PSMN5R6-100XS | PSMN5R6-100XS,127( 9340 660 41127 ) |
订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF(小时) | 潮湿敏感度等级 | MSL LF |
PSMN5R6-100XS | PSMN5R6-100XS,127 | NA | NA |
文档标题 | 类型分类 | 格式 | 更新日期 |
PSMN5R6-100XS (中文):N-channel 100V 5.6 mOhm standard level MOSFET in TO220F (SOT186A) | Data sheet | 2012-03-06 | |
AN10273:Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2010-03-17 | |
AN11158:Understanding power MOSFET data sheet parameters | Application note | 2014-02-04 | |
AN11160:Designing RC Snubbers | Application note | 2012-10-01 | |
AN11156:Using Power MOSFET Zth Curves | Application note | 2012-10-10 | |
AN11243:Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2012-10-29 | |
AN11158_ZH:Understanding power MOSFET data sheet parameters | Application note | 2013-11-08 | |
PSMN5R6-100XS:PSMN5R6-100XS Spice model | SPICE model | lib | 2012-03-20 |
PSMN5R6-100XS:PSMN5R6-100XS Thermal model | Thermal model | pdml | 2012-03-15 |
sot186a_po:plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" | Outline drawing | 2009-10-08 |