PSMN7R6-100BSE: N沟道100 V 7.6 mΩ标准电平MOSFET,采用D2PAK封装

标准电平N沟道MOSFET,采用D2PAK封装,额定工作温度为175 °C。作为恩智浦“NextPower Live”产品组合的一部分,PSMN7R6-100BSE进一步拓展了最新的“热插拔”控制器——耐用程度足以承受开启期间的大量浪涌电流,同时提供低RDS(on)特性,可在持续使用期间保持低温高效。非常适合基于48 V背板/供电轨的通信系统。

SOT404
数据手册 (1)
名称/描述Modified Date
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK (REV 1.0) PDF (279.0 kB) PSMN7R6-100BSE [English]18 Dec 2012
应用说明 (8)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) (REV 1.2) PDF (237.0 kB) SOT404 [English]06 Sep 2016
包装 (1)
名称/描述Modified Date
D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or... (REV 2.0) PDF (90.0 kB) SOT404_118 [English]04 Aug 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)QGD [typ] (nC)Tj [max] (°C)QG(tot) [typ] (nC)ID [max] (A)Qr [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)VGSth [typ] (V)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN7R6-100BSEActiveSOT404AD2PAKN11007.641175128752103128296N71104502013-01-07
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN7R6-100BSESOT404Reel 13" Q1/T1ActivePSMN7R6-100BSEJ (9340 675 43118)PSMN7R6-100BSEPSMN7R6-100BSE11
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK PSMN7R6-100BSE
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN7R6-100BSE Spice model PSMN7R6-100BSE
PSMN7R6-100BSE Thermal model PSMN7R6-100BSE
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) BUK769R6-80E
D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or... BUK769R6-80E
TYN20B-800T