MBRB8H100T4G: Schottky Barrier Rectifier, 100 V, 8.0 A
The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
特性- Guarding for Stress Protection
- Low Forward Voltage
- 175C Operating Junction Temperature
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Short Heat Sink Tab Manufactured - Not Sheared!
- Case: Molded Expoxy
- Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
- Epoxy Meets UL94, VO at 1/8
- These are Pb-Free Packages
- NBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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应用- Switching Power Supplies, Power Inverters
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封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MBRB8H100T4G | Active | Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.68 |
| NBRB8H100T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.46 |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBRB8H100T4G | Single | 100 | 0.71 | 4.5 | 8 | 250 | - | - |
| NBRB8H100T4G | Single | 100 | 0.71 | 4.5 | 8 | 250 | - | - |
